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Above 70% PAE in Q-band with AlN/GaN HEMTs structures
Archive ouverte: Communication dans un congrès
Harrouche, Kathia | 2021-06-14
International audience. In this paper, we report on a vertically scaled AlN/GaN HEMT technology. The comparison between a 3 nm and 4 nm barrier thickness shows both superior performances and robustness for the thinn...
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High Power AlN/GaN HEMTs with record power-added-efficiency >70% at 40 GHz
Archive ouverte: Communication dans un congrès
Harrouche, Kathia | 2020-08-04
International audience. We report on breakthrough power-added-efficiency (PAE) Q-band performances using a vertically scaled AlN/GaN HEMT technology. The comparison between a 3 nm and 4 nm barrier thickness shows bo...
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High performance and highly robust AlN/GaN HEMTs for millimeter-wave operat...
Archive ouverte: Article de revue
Harrouche, Kathia | 2019
International audience. We report on a 3 nm AlN/GaN HEMT technology for millimeter-wave applications. Electrical characteristics for a 110 nm gate length show a maximum drain current density of 1.2 A/mm, an excellen...
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Current status and challenges of GaN millimeter-wave transistors. Current s...
Archive ouverte: Communication dans un congrès
Kabouche, Riad | 2018-04-18
International audience. In this work, we show that a careful architecture of buffer layers should be employed in order to perform high performance millimeter-wave GaN devices. The use of higher bias operation (VDS ≥...
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C-doped AlN/GaN HEMTs for High efficiency mmW applications
Archive ouverte: Communication dans un congrès
Pécheux, Romain | 2018-07-05
International audience. We report on high power-added-efficiency using AlN/GaN heterostructure with a carbon doped buffer layer for millimeter wave applications (C-doped HEMTs). The carbon doped HEMTs show high elec...
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Low RF losses up to 110 GHz in GaN-on-silicon HEMTs
Archive ouverte: Communication dans un congrès
Pecheux, R | 2017-05-21
International audience. We report on low RF losses at the interface between the epitaxial structure and the silicon substrate (less than 0.8 dB/mm up to 110GHz) of AlN/GaN high electron mobility transistors (HEMTs) ...
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First demonstration of RF GaN-based transistors using buffer-free heterostr...
Archive ouverte: Communication dans un congrès
Pecheux, R | 2018-11-11
International audience
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Development of setup for on-wafer pulse-to-pulse stability characterization...
Archive ouverte: Communication dans un congrès
Pécheux, Romain | 2018-06-13
International audience. We report on the development of a test bench to extract pulse-to-pulse (P2P) stability On-Wafer in Ku-band. The P2P stability is crucial for RADAR performances. GaN HEMT transistors are a pro...
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Remarkable Lateral Breakdown Voltage in thin channel AlGaN/GaN High Electro...
Archive ouverte: Communication dans un congrès
Abid, Idriss | 2019-07-07
International audience. GaN and SiC materials and their device technology have matured and become commerciallyavailable. Fundamental material properties will soon limit the performance. Consequently, a novelbreakthr...
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Remarkable Breakdown Voltage on AlN/AlGaN/AlN double heterostructure
Archive ouverte: Communication dans un congrès
Abid, Idriss | 2020-09-13
International audience. Ultra wide band gap (UWBG) materials such as AlN are part of a class of materials that have a larger band gap than conventional wide band gap (WBG) materials such as GaN, allowing higher oper...
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