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AlGaN/GaN High Electron Mobility Transistors Grown by MOVPE on 3C-SiC/Si(11...
Archive ouverte: Article de revue
Lesecq, Marie | 2022-05-31
International audience. In this work, an AlGaN/GaN HEMT structure is grown on a 0.8 μm thick 3C-SiC layer on high resistivity Silicon substrate. The RF propagation losses are investigated and compared with the ones ...
Consultable en ligne -
Investigation of electrical activity at the AlN/Si interface using scanning...
Archive ouverte: Communication dans un congrès
Bah, Micka | 2021-06-14
ORAL. International audience. This work aims to understand the origin of propagation losses in GaN-on-Si devices at microwave frequencies thanks to original AFM's electrical modes such as scanning capacitance micros...
Consultable en ligne
