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AlGaN/GaN HEMTs on AlN substrate for power electronics

Archive ouverte : Communication dans un congrès

Mehta, Jash | Abid, Idriss | Ngo, Thi Huong | Cordier, Yvon | Medjdoub, F

Edité par HAL CCSD

International audience. GaN high electron mobility transistors (HEMT) are becoming the mainstream for high frequency and power switching applications. On the other hand, Ultra-Wide Band Gap (UWBG) materials such as AlN that has a bandgap of 6.2 eV are attracting attention for pushing the limits of high voltage power devices. In this work, we report on AlGaN/GaN-on-AlN HEMTs using thick and thin GaN channels in comparison with GaN-on-Si HEMTs using a similar thin epi-design.

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