Desorption timescales on epitaxial graphene via Fermi level shifting and Reststrahlen monitoring | Tran, Ngoc Thanh Mai
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Desorption timescales on epitaxial graphene via Fermi level shifting and Reststrahlen monitoring

Archive ouverte : Article de revue

Tran, Ngoc Thanh Mai | Mhatre, Swapnil | Santos, Cristiane | Biacchi, Adam | Kelley, Mathew | Hill, Heather | Saha, Dipanjan | Liang, Chi-Te | Elmquist, Randolph | Newell, David | Hackens, Benoit | Hacker, Christina | Rigosi, Albert

Edité par HAL CCSD ; Elsevier

International audience. This work reports information on the transience of hole doping in epitaxial graphene devices when nitric acid is used as an adsorbent. Under vacuum conditions, desorption processes are monitored by electrical and spectroscopic means to extract the relevant timescales from the corresponding data. It is of vital importance to understand the reversible nature of hole doping because such device processing can be a suitable alternative to large-scale, metallic gating. Most measurements are performed post-exposure at room temperature, and, for some electrical transport measurements, at 1.5 K. Vacuum conditions are applied to many measurements to replicate the laboratory conditions under which devices using this doping method would be measured. The relevant timescales from transport measurements are compared with results from X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy measurements, with the latter performed at ambient conditions and accompanied by calculations of the spectra in the Reststrahlen band.

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