Breakdown mechanism of AlGaN/GaN HEMT on 200-mm silicon substrate with silicon implant-assisted contacts

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Chanuel, Antoine | Gobil, Yveline | Hsu, Chuan Lun | Charles, Matthew | Coig, Marianne | Biscarrat, Jerome | Aussenac, Francois | Defrance, N. | Gaquiere, Christophe | Gaillard, Fred | Morvan, Erwan

Edité par HAL CCSD ; Institute of Electrical and Electronics Engineers

International audience. We present an access technology suitable for scaled gallium nitride (GaN) high electron mobility transistor (HEMT) in Ka -band. The comparison between OFF-state characteristics of a silicon implant-assisted contact and a conventional recessed Ti/Al-based Ohmic contact is presented. The transistor with source/drain extension by Si implantation has a low contact resistance with RC down to 0.4 Ω⋅mm and a sheet resistance of the implanted layer of 67 Ω /sq. In addition to promising contact performance, transistors with source and drain extension sustain high breakdown voltage (BV) with short dimensions for high-frequency applications. The systematic study of gate–source, gate–drain, and gate length variations shows a new breakdown mechanism for implanted access technology with current flowing beneath the channel leading to an unusual correlation between source–drain spacing and BV. With a conventional titanium-alloyed contact, a punchthrough effect is responsible for the BV. Cross-sectional transmission electron microscopy and secondary ion mass spectroscopy (SIMS) characterizations on both wafers highlight a degradation of the AlGaN-based back-barrier and a high silicon concentration deep into the epitaxial stack on the implanted wafers indicating a way to improve BV with an adapted process flow.

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