Mid-wave Infrared sensitized InGaAs using Intraband Transition in Doped Colloidal II-VI Nanocrystals | Khalili, Adrien
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Mid-wave Infrared sensitized InGaAs using Intraband Transition in Doped Colloidal II-VI Nanocrystals

Archive ouverte : Article de revue

Khalili, Adrien | Cavallo, Mariarosa | Dang, Tung Huu | Dabard, Corentin | Zhang, Huichen | Bossavit, Erwan | Abadie, Claire | Prado, Yoann | Xu, Xiang Zhen | Ithurria, Sandrine | Vincent, Grégory | Coinon, Christophe | Desplanque, Ludovic | Lhuillier, Emmanuel

Edité par HAL CCSD ; American Institute of Physics

International audience. Narrow bandgap nanocrystals (NCs) are now used as infrared light absorbers, making them competitors to epitaxially grown semiconductors. However, these two types of material could benefit from one another. While bulk materials are more effective in transporting carriers and give a high degree of doping tunability, nanocrystals offer a larger spectral tunability without latticematching constraint. Here, we investigate the potential of sensitizing InGaAs in the mid-wave infrared throughout the intraband transition of self-doped HgSe NCs. Our device geometry enables the design of a photodiode remaining mostly unreported for intraband-absorbing NCs. Finally, this strategy allows for more effective cooling and preserves detectivity above 10 8 Jones up to 200 K, making it closer to cryo-free operation for mid-infrared NC-based sensors.

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