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Interfaces between gamma-Al2O3 and silicon

Archive ouverte : Article de revue

Boulenc, Pierre | Devos, Isabelle

Edité par HAL CCSD ; Elsevier

International audience. As the epitaxy of crystalline LaAlO3 has not been realized yet, we investigated the use of a g-Al2O3 buffer layer betweenthe high-k and the substrate. We firstly studied the structural matching of g-Al2O3(0 0 1) with a Si(0 0 1)-pð2 1Þreconstructed surface. According to experimental data and computations in the density functional theory framework, wefound stable interfaces between g-Al2O3 and Si which encounters surface reconstruction changes. These interfaces satisfythe criterion of an insulating buffer layer.

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