Electrical characterization of In0.53Ga0.47As/In0.52Al0.48As high electron mobility transistors on plastic flexible substrate under mechanical bending conditions | Shi, J.
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Electrical characterization of In0.53Ga0.47As/In0.52Al0.48As high electron mobility transistors on plastic flexible substrate under mechanical bending conditions

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Shi, J. | Wichmann, Nicolas | Roelens, Yannick | Bollaert, S.

Edité par HAL CCSD ; American Institute of Physics

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