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Deterministic placement of doping atoms on hydroxylated surfaces

Archive ouverte : Communication dans un congrès

Mathey, L. | Veyre, L. | Fontaine, H. | Enyedi, V. | Yckache, K. | Guerrero, J. | Chevalier, N. | Martin, F. | Barnes, J.P. | Bertin, F. | Durand, C. | Berthe, Maxime | Grandidier, B. | Thieuleux, C. | Coperet, C.

Edité par HAL CCSD

An improved approach of semi-conductor doping by Molecular Layer Deposition (MLD) is investigated. Here, dopant-containing molecules are directly grafted onto silica-coated silicon wafers and optimized ligands can provide more effective dopant drive-in annealing. The grafting approach is validated on non-porous silica and successfully transferred onto silicon wafers.

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