High performance and highly robust AlN/GaN HEMTs for millimeter-wave operation

Archive ouverte : Article de revue

Harrouche, Kathia | Kabouche, Riad | Okada, Etienne | Medjdoub, F

Edité par HAL CCSD ; IEEE Electron Devices Society

International audience. We report on a 3 nm AlN/GaN HEMT technology for millimeter-wave applications. Electrical characteristics for a 110 nm gate length show a maximum drain current density of 1.2 A/mm, an excellent electron confinement with a low leakage current below 10 μA/mm, a high breakdown voltage and a F T /F max of 63/300 GHz at a drain voltage of 20V. Despite residual trapping effects, state of the art large signal characteristics at 40 GHz and 94 GHz are achieved. For instance, an outstanding power added efficiency of 65% has been reached at V DS = 10V in pulsed mode at 40 GHz. Also, an output power density of 8.3 W/mm at V DS = 40V is obtained associated to a power added efficiency of 50%. At 94 GHz, a record CW output power density for Ga-polar GaN transistors has been reached with 4 W/mm. Additionally, room temperature preliminary robustness assessment at 40 GHz has been performed at V DS = 20V. 24 hours RF monitoring showed no degradation during and after the test.

Consulter en ligne

Suggestions

Du même auteur

Above 70% PAE in Q-band with AlN/GaN HEMTs structures | Harrouche, Kathia

Above 70% PAE in Q-band with AlN/GaN HEMTs structures

Archive ouverte: Communication dans un congrès

Harrouche, Kathia | 2021-06-14

International audience. In this paper, we report on a vertically scaled AlN/GaN HEMT technology. The comparison between a 3 nm and 4 nm barrier thickness shows both superior performances and robustness for the thinn...

High Efficiency AlN/GaN HEMTs for Q-Band Applications with an Improved Thermal Dissipation | Kabouche, Riad

High Efficiency AlN/GaN HEMTs for Q-Band Applications with an Improved Ther...

Archive ouverte: Article de revue

Kabouche, Riad | 2019-03

International audience. In this paper, we demonstrate Q-band power performance of carbon doped AlN/GaN high electron mobility transistors (HEMTs) using a deep sub-micrometer gate length (120 nm). With a maximum drai...

Short term reliability and robustness of ultra-thin barrier, 110 nrn-gate AlN/GaN HEMTs | Gao, Zhan

Short term reliability and robustness of ultra-thin barrier, 110 nrn-gate A...

Archive ouverte: Communication dans un congrès

Gao, Zhan | 2020-07-20

International audience. Short-term reliability and robustness of 110 nm AlN/GaN HEMTs has been evaluated by means off-state, semi-on state and on-state step stress tests on devices having different gate-drain distan...

Du même sujet

Short-term reliability of high performance Q-band AlN/GaN HEMTs | Kabouche, R.

Short-term reliability of high performance Q-band AlN/GaN HEMTs

Archive ouverte: Communication dans un congrès

Kabouche, R. | 2020-04-28

International audience. We report on an on-wafer short-term 40 GHz RF reliability stress test comparison between a 3 nm versus 4 nm barrier thickness AlN/GaN HEMT technology showing state-ofthe-art power performance...

High Power AlN/GaN HEMTs with record power-added-efficiency >70% at 40 GHz | Harrouche, Kathia

High Power AlN/GaN HEMTs with record power-added-efficiency >70% at 40 GHz

Archive ouverte: Communication dans un congrès

Harrouche, Kathia | 2020-08-04

International audience. We report on breakthrough power-added-efficiency (PAE) Q-band performances using a vertically scaled AlN/GaN HEMT technology. The comparison between a 3 nm and 4 nm barrier thickness shows bo...

C-doped AlN/GaN HEMTs for High efficiency mmW applications | Pécheux, Romain

C-doped AlN/GaN HEMTs for High efficiency mmW applications

Archive ouverte: Communication dans un congrès

Pécheux, Romain | 2018-07-05

International audience. We report on high power-added-efficiency using AlN/GaN heterostructure with a carbon doped buffer layer for millimeter wave applications (C-doped HEMTs). The carbon doped HEMTs show high elec...

High Efficiency AlN/GaN HEMTs for Q-Band Applications with an Improved Thermal Dissipation | Kabouche, Riad

High Efficiency AlN/GaN HEMTs for Q-Band Applications with an Improved Ther...

Archive ouverte: Article de revue

Kabouche, Riad | 2019-03

International audience. In this paper, we demonstrate Q-band power performance of carbon doped AlN/GaN high electron mobility transistors (HEMTs) using a deep sub-micrometer gate length (120 nm). With a maximum drai...

An advanced ageing methodology for robustness assessment of normally-off AlGaN/GaN HEMT | Albany, F.

An advanced ageing methodology for robustness assessment of normally-off Al...

Archive ouverte: Communication dans un congrès

Albany, F. | 2021-01-11

International audience. The semi-on-state reliability of normally-off AlGaN/GaN high electron mobility transistor fabricated by fluorine ion plasma implantation technology is reported, focusing on an advanced dc ste...

Short term reliability and robustness of ultra-thin barrier, 110 nrn-gate AlN/GaN HEMTs | Gao, Zhan

Short term reliability and robustness of ultra-thin barrier, 110 nrn-gate A...

Archive ouverte: Communication dans un congrès

Gao, Zhan | 2020-07-20

International audience. Short-term reliability and robustness of 110 nm AlN/GaN HEMTs has been evaluated by means off-state, semi-on state and on-state step stress tests on devices having different gate-drain distan...

Chargement des enrichissements...