![Current status and challenges of GaN millimeter-wave transistors. Current status and challenges of GaN millimeter-wave transistors: [Invited] | Kabouche, Riad](https://hal.archives-ouvertes.fr/hal-03287817/thumb/medium "Plus d'infos sur 'Current status and challenges of GaN millimeter-wave transistors. Current status and challenges of GaN millimeter-wave transistors: [Invited]'")
0 avis
Current status and challenges of GaN millimeter-wave transistors. Current status and challenges of GaN millimeter-wave transistors: [Invited]
Archive ouverte : Communication dans un congrès
Edité par HAL CCSD
International audience. In this work, we show that a careful architecture of buffer layers should be employed in order to perform high performance millimeter-wave GaN devices. The use of higher bias operation (VDS ≥ 20 V) will be possible while using short gate length only if the thermal resistance induced by the buffer layers is reduced. In particular, it is shown that a thick AlGaN back barrier (DHFET structure) results in a huge drop of the PAE at VDS = 25V despite the pulsed mode conditions. With an enhanced thermal dissipation as compared to the DHFET, the carbon-doped structure delivers much higher performances illustrated by a state-of-the-art combination of PAE (> 50%) and an output power density of 7 W/mm at 40 GHz and VDS = 25V.
Consulter en ligne
Suggestions
Du même auteur
Du même sujet
