Molecular beam epitaxial growth of hexagonal boron nitride on Ni foils

Archive ouverte : Article de revue

Hadid, Jawad | Colambo, Ivy | Boyaval, Christophe | Nuns, Nicolas | Dudin, Pavel | Avila, Jose | Wallart, X. | Vignaud, Dominique

Edité par HAL CCSD ; IOP Publishing

International audience. Hexagonal boron nitride was synthesized by molecular beam epitaxy on polycrystalline Ni foils using borazine (B 3 N 3 H 6) as precursor. Our photoemission analysis shows that several components of boron and nitrogen are detected, suggesting the complex nature of the bonds noticeably at the h-BN/Ni interface. The BN thickness was estimated by photoemission and the BN distribution by ToF-SIMS. Due to the catalytic effect of the Ni substrate, this thickness is self-limited in the range 1-2 layers regardless of the borazine dose. A spatially resolved photoemission study was carried out before and after transfer of the h-BN on a Si substrate. It shows that a strong electronic coupling exists at the interface between h-BN and polycrystalline Ni, not only for (111) grains, which disappears after transfer on Si. In addition, we highlight the importance of detecting π plasmons in the photoemission spectra to confirm the hexagonal nature of boron nitride.

• Sujet
• Description