GaN Schottky Diode for High Power THz Generation using Multiplier Principle

Archive ouverte : Communication dans un congrès

Di Gioia, Giuseppe | Chinni, V, | Zegaoui, Malek | Cordier, Y | Maestrini, A | Treuttel, J | Ducournau, Guillaume | Roelens, Yannick | Zaknoune, M

Edité par HAL CCSD

International audience. GaN-based planar Schottky barrier diodes with potential applications in THz frequency multipliers were fabricated and characterized. GaN is a promising candidate to overcome all the physical limitations of GaAs which have been reached in the frame of high frequency power multiplier applications. Fabrication process of GaN Schottky diodes performed by e-beam is presented and DC characterizations are reported. The preliminary results showed that the behaviour in reverse bias is dominated by a leakage coming from the Schottky surface more than the periphery of the diode despite the supposed damage caused by the dry etching.

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