A 140 GHz to 170 GHz active tunable noise source development in SiGe BiCMOS 55 nm technology

Archive ouverte : Communication dans un congrès

Fiorese, Victor | Carlos, Joao | Goncalves, Azevedo | Bouvot, Simon | Dubois, Emmanuel | Gaquière, Christophe | Ducournau, Guillaume | Danneville, François | Lépilliet, Sylvie | Gloria, Daniel

Edité par HAL CCSD ; IEEE

oral EuMIC08-5Session EuMIC08 - Components and Subsystems for 100 GHz and Above. International audience. A new approach of millimeter wave (mmW) integrated active noise source (NS) is introduced for noise characterization up to 170 GHz. This NS is based on a diode biased in avalanche regime in BiCMOS 55 nm (B55) technology from STMicroelectronics. In order to increase the noise sensitivity of setup using this NS, a two-stage cascode Low Noise Amplifier (LNA) composed of 4 high speed NPN transistors is cascaded at its output, targeting high available Excess Noise Ratios (ENRav). ENRav levels have been extracted, showing tunable values ranged between 0 dB to 37 dB in the 140-170 GHz frequency range.

Consulter en ligne

Suggestions

Du même auteur

220 GHz E-Plane Transition from Waveguide to Suspended Stripline Integrated on Industrial Organic Laminate Substrate Technology | Fiorese, Victor

220 GHz E-Plane Transition from Waveguide to Suspended Stripline Integrated...

Archive ouverte: Communication dans un congrès

Fiorese, Victor | 2021-04-02

International audience. In this paper, an assessment up to 220 GHz of industrial organic laminate substrate technology to integrate millimeter-wave (mmW) waveguide to suspended stripline (SSL) transition is proposed...

Substrate engineering of inductors on SOI for improvement of Q-factor and application in LNA | Bhaskar, Arun

Substrate engineering of inductors on SOI for improvement of Q-factor and a...

Archive ouverte: Article de revue

Bhaskar, Arun | 2020-08-27

Renatech Network, Laboratoire commun ST-Microelectronics - IEMN. International audience. High Q-factor inductors are critical in designing high performance RF/microwave circuits on SOI technology. Substrate losses i...

Substrate-Induced Dissipative and Non-Linear Effects in RF Switches: Probing Ultimate Performance Based on Laser-Machined Membrane Suspension | Bhaskar, Arun

Substrate-Induced Dissipative and Non-Linear Effects in RF Switches: Probin...

Archive ouverte: Article de revue

Bhaskar, Arun | 2022

International audience. With the evolution of radio frequency (RF)/microwave technology, there is a demand for circuits that are able to meet highly challenging RF front end specifications. Silicon-on-insulator (SOI...

Chargement des enrichissements...