High Breakdown Field and Low Trapping Effects up to 1400 V in Normally Off GaN‐on‐Silicon Heterostructures

Archive ouverte : Communication dans un congrès

Abid, Idriss | Hamdaoui, Youssef | Mehta, Jash | Medjdoub, F

Edité par HAL CCSD

222, session 2A, A Nano-scale production and characterization. International audience. In this study, we report on the development of a fully normally-off high electron mobility transistor (HEMT) gallium nitride on silicon (GaN-on-Si) heterostructures designed for high voltage operation. The normally-off configuration was achieved by means of a p-gallium nitride (p-GaN) cap layer enabling a positive threshold voltage higher than +1 V. The high voltage operation was ensured with a bufferbased on AlN/GaN superlattice (SL) delivering a vertical breakdown voltage about 1.1 kV for a leakage current density of 1mA/cm². With the substrate grounded, hard breakdown voltage transistors at VGS = 0V is about 1.45 kV, corresponding to an outstanding breakdown field higher than 2.4 MV/cm. High voltage characterizations revealed a state of the art combination of breakdown voltage at VGS = 0V together with low electron trapping effects up to 1.4 kV as assessed by means of substrate ramp measurements.

Consulter en ligne

Suggestions

Du même auteur

Low Buffer Trapping Effects above 1200 V in Normally off GaN-on-Silicon Field Effect Transistors | Abid, Idriss

Low Buffer Trapping Effects above 1200 V in Normally off GaN-on-Silicon Fie...

Archive ouverte: Article de revue

Abid, Idriss | 2022

International audience. We report on the fabrication and electrical characterization of AlGaN/GaN normally off transistors on silicon designed for high-voltage operation. The normally off configuration was achieved ...

Local substrate removal for next generation GaN-on-Silicon power transistors | Hamdaoui, Youssef

Local substrate removal for next generation GaN-on-Silicon power transistor...

Archive ouverte: Communication dans un congrès

Hamdaoui, Youssef | 2022-08-29

International audience

AlGaN channel high electron mobility transistors on bulk AlN substrate | Mehta, Jash

AlGaN channel high electron mobility transistors on bulk AlN substrate

Archive ouverte: Communication dans un congrès

Mehta, Jash | 2022-10-09

International audience

Du même sujet

Major Improvement in the Cycling Ability of Pseudocapacitive Vanadium Nitride Films for Micro‐Supercapacitor | Jrondi, Aiman

Major Improvement in the Cycling Ability of Pseudocapacitive Vanadium Nitri...

Archive ouverte: Article de revue

Jrondi, Aiman | 2023

International audience. Vanadium nitride film made using a thin film deposition technique is a promising electrode material for micro-supercapacitor applications owing to its high electrical conductivity and high vo...

Phototunable chip-scale topological photonics: 160 Gbps waveguide and demultiplexer for THz 6G communication | Kumar, Abhishek

Phototunable chip-scale topological photonics: 160 Gbps waveguide and demul...

Archive ouverte: Article de revue

Kumar, Abhishek | 2022-12

The authors declare that all the data supporting the findings of thisstudy are openly available in NTU research data repository DR-NTU athttps://doi.org/10.21979/N9/5FK01V.. International audience. The revolutionary...

GDR HOWDI 2022 Meeting : GAP(111)B-SE Surface for TMD epitaxial growth | Chapuis, Niels

GDR HOWDI 2022 Meeting : GAP(111)B-SE Surface for TMD epitaxial growth

Archive ouverte: Poster de conférence

Chapuis, Niels | 2022-05-09

International audience. Over the past few years, 2D-Transition Metal Dichalcogenides (TMDs) have revealed great potential for optoelectronics and nanoelectronics devices, thanks to their exceptional properties, not ...

Tunable Topological Acoustic Tamm States in Comblike Structures Based on Band Inversion around Flat Bands | Khattou, Soufyane

Tunable Topological Acoustic Tamm States in Comblike Structures Based on Ba...

Archive ouverte: Article de revue

Khattou, Soufyane | 2022-12

International audience. We investigate the existence of acoustic Tamm states at the interface between two one-dimensional (1D) comblike phononic crystals (PnCs) based on slender tubes and discuss their topological o...

[Review] Emerging topics in nanophononics and elastic, acoustic, and mechanical metamaterials: an overview | Krushynska, Anastasiia

[Review] Emerging topics in nanophononics and elastic, acoustic, and mechan...

Archive ouverte: Article de revue

Krushynska, Anastasiia | 2023

International audience. This broad review summarizes recent advances and “hot” research topics in nanophononics and elastic, acoustic, and mechanical metamaterials based on results presented by the authors at the EU...

Assessment of Large Critical Electric Field in Ultra-wide Bandgap p- type Spinel ZnGa2O4 | Chi, Zeyu

Assessment of Large Critical Electric Field in Ultra-wide Bandgap p- type S...

Archive ouverte: Article de revue

Chi, Zeyu | 2023

International audience. The spinel Zinc Gallate ZnGa2O4 stands out among the emerging ultra-wide bandgap (~5eV) semiconductors as the ternary complex oxide with the widest gap where bipolar conductivity (electrons a...

Chargement des enrichissements...