Active Ultrahigh‐Q (0.2×10^6) THz Topological Cavities on a Chip

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Kumar, Abhishek | Gupta, Manoj | Pitchappa, Prakash | Tan, Thomas Caiwei | Chattopadhyay, Udvas | Ducournau, Guillaume | Wang, Nan | Chong, Yidong | Singh, Ranjan

Edité par HAL CCSD ; Wiley-VCH Verlag

International audience. Rapid scaling of semiconductor devices has led to an increase in the number of processor cores and integrated functionalities onto a single chip to support the growing demands of high-speed and large-volume consumer electronics. To meet this burgeoning demand, an improved interconnect capacity in terms of bandwidth density and active tunability is required for enhanced throughput and energy efficiency. Low-loss terahertz silicon interconnects with larger bandwidth offer a solution for the existing inter-/intrachip bandwidth density and energy-efficiency bottleneck. Here, a low-loss terahertz topological interconnect–cavity system is presented that can actively route signals through sharp bends, by critically coupling to a topological cavity with an ultrahigh-quality (Q) factor of 0.2 × 106. The topologically protected large Q factor cavity enables energy-efficient optical control showing 60 dB modulation. Dynamic control is further demonstrated of the critical coupling between the topological interconnect–cavity for on-chip active tailoring of the cavity resonance linewidth, frequency, and modulation through complete suppression of the back reflection. The silicon topological cavity is complementary metal–oxide–semiconductor (CMOS)-compatible and highly desirable for hybrid electronic–photonic technologies for sixth (6G) generation terahertz communication devices. Ultrahigh-Q cavity also paves the path for designing ultrasensitive topological sensors, terahertz topological integrated circuits, and nonlinear topological photonic devices.

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