Ultrafast LT-GaAs photoconductors based on a Fabry-Pérot cavity designed for 1550 nm wavelength illumination

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Ultrafast LT-GaAs photoconductors based on a Fabry-Pérot cavity designed for 1550 nm wavelength illumination

Archive ouverte : Communication dans un congrès

Edité par HAL CCSD ; IEEE

International audience. We study low-temperature-grown GaAs (LT-GaAs) based ultrafast Fabry-Pérot cavity photoconductors, designed for THz optoelectronics applications using 1550 nm pulsed lasers. We present here, as a proof of concept, the under-sampling of continuous RF waves up to 67 GHz.

Langue: Anglais

Date de publication: 2017-08-27

Source: 2017 42nd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)

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