Study of Polarisation and Conduction Mechanisms in Ferroelectric Hf0.5Zr0.5O2 Down to Deep Cryogenic Temperature 4.2 K

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Manchon, Benoit | Coffineau, Dorian | Segantini, Greta | Baboux, Nicolas | Rojo Romeo, Pedro | Barhoumi, Rabei | Cañero Infante, Ingrid | Alibart, Fabien | Vilquin, Bertrand | Drouin, Dominique | Deleruyelle, Damien

Edité par HAL CCSD

International audience. Two structures, TiN/HZO/TiN and TiN/HZO/AlOx(2nm)/TiN, were fabricated and their electrical properties were studied down to 4.2 K. Low voltage IVs were carried out as well as polarisation-voltage curves at each temperature steps. The aim was to study and compare the evolution of ferroelectric switching and conduction in HZO for both structures. A systematic study of possible charge transport mechanisms was carried out.

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