Analyzing the Mechanism of Zinc Oxide Nanowires Bending and Bundling Induced by Electron Beam under Scanning Electron Microscope Using Numerical and Simulation Analysis

Archive ouverte : Article de revue

Elzein, Basma | Elrashidi, Ali | Dogheche, El Hadj | Jabbour, Ghassan

Edité par HAL CCSD ; MDPI

International audience. The bending effect of self-catalyst zinc oxide nanowires on a photoconducting behavior has been investigated by in-situ scanning electron microscope method and interpreted by analytical modeling. Zinc oxide NWs tend to incline due to geometric instability and because of the piezoelectric properties, which was confirmed by scanning electron microscope images. A cantilever bending model adequately describes the bending and bundling events, which are linked to the electrostatic interaction between nanowires. The light absorption of zinc oxide nanowires in the visible and near infrared bands has been modelled using the finite difference time domain method. The influence of the density of nanowires (25%, 50%, 75%) and the integration of plasmonic nanoparticles distributed on the seed layer (with varied radii) on the light absorption of zinc oxide nanowires was studied using simulation analysis. We have shown that the geometry of zinc oxide nanowires in terms of length, separation distance, and surface charge density affects the process of zinc oxide nanowires bending and bundling and that absorption will be maximized by integrating Au plasmonic nanoparticles with a radius of 10 nm.

Consulter en ligne

Suggestions

Du même auteur

In Situ Growth of PbS Nanoparticles without Organic Linker on ZnO Nanostructures via Successive Ionic Layer Adsorption and Reaction (SILAR) | Elzein, Basma

In Situ Growth of PbS Nanoparticles without Organic Linker on ZnO Nanostruc...

Archive ouverte: Article de revue

Elzein, Basma | 2022-10

This work is based on our patent number “US 2015/0280017 A1”.. International audience. The process of effective solar energy harvesting and conversion requires efficient photon absorption, followed by charge generat...

An optical power divider based on mode coupling using GaN/Al2O3 for underwater communication | Purnamaningsih, Retno Wigajatri

An optical power divider based on mode coupling using GaN/Al2O3 for underwa...

Archive ouverte: Article de revue

Purnamaningsih, Retno Wigajatri | 2019

JIF=2.140. International audience. This paper details the design of a 1 \texttimes 8 optical power divider, using a gallium nitride (GaN) semiconductor on sapphire, which can be applied to underwater optical wireles...

A barium titanate‐on‐oxide insulator optoelectronics platform | Cao, Yu

A barium titanate‐on‐oxide insulator optoelectronics platform

Archive ouverte: Article de revue

Cao, Yu | 2021-09

International audience. Electro-optic modulators are among the most important building blocks in optical communication networks. Lithium niobate, for example, has traditionally been widely used to fabricate high-spe...

Du même sujet

Morphological, structural, electrical, and piezoelectric analysis of hydrothermally grown ZnO nanowires on various substrates | Hamdi, Abderrahmane

Morphological, structural, electrical, and piezoelectric analysis of hydrot...

Archive ouverte: Article de revue

Hamdi, Abderrahmane | 2022-07

International audience. In this present work, we have successfully fabricated a piezoelectric structure based on ZnO nanowires (ZnO NWs) using a simple, low cost and environmentally friendly hydrothermal method. Thi...

The Fine-Structure Constant as a Ruler for the Band-Edge Light Absorption Strength of Bulk and Quantum-Confined Semiconductors | Prins, P,

The Fine-Structure Constant as a Ruler for the Band-Edge Light Absorption S...

Archive ouverte: Article de revue

Prins, P, | 2021-11-24

International audience. Low-dimensional semiconductors have found numerous applications in optoelectronics. However, a quantitative comparison of the absorption strength of lowdimensional versus bulk semiconductors ...

Local Schottky contacts of embedded Ag nanoparticles in Al 2 O 3 /SiN x :H stacks on Si: a design to enhance field effect passivation of Si junctions | Elmi, E

Local Schottky contacts of embedded Ag nanoparticles in Al 2 O 3 /SiN x :H ...

Archive ouverte: Article de revue

Elmi, E | 2018-07-13

International audience. This paper describes an original design leading to the field effect passivation of Si n +-p junctions. Ordered Ag nanoparticle (Ag-NP) arrays with optimal size and coverage fabricated by mean...

Chargement des enrichissements...