Development Status of Millimeter Wave GaN Schottky Doublers above W-band for the Implementation of European Terahertz Sources for Astronomy and Astrophysics

Archive ouverte : Communication dans un congrès

Mondal, P. | D. Gioia, G. | Bouillaud, H. | Roelens, Yannick | Vacelet, T. | Gatilova, L. | Ducournau, Guillaume | Zegaoui, M. | Zaknoune, M. | Treuttel, J.

Edité par HAL CCSD

International audience. In this report we present the effort to develop high power handling and efficiency GaN-based frequency doublers required to build a 1 THz local oscillator source for instrumentation in astronomy and astrophysics. The design study focuses on identifying the key aspect to reach performances with simplified architecture as compared to existing solutions. Predicted performances of GaN Schottky doublers are presented and discussed. A single section doubler produces an output power of 175 mW at 114 GHz for an input power of 1 W. The reverse bias voltage is tuned to maximize its performance but remains well below the breakdown voltage of the GaN Schottky diodes developed at IEMN (-75 V). Its performance can be enhanced further with thin epilayer and high mobility sample for the diode development and the state-of-theart performance can be achieved by using power combining technique to reach the 300 mW goals.

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