Traveling wave photomixers based on low-temperature-grown Gallium Arsenide reaching 50 mA/W under 1550 nm CW illumination | Tannoury, Charbel
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Traveling wave photomixers based on low-temperature-grown Gallium Arsenide reaching 50 mA/W under 1550 nm CW illumination

Archive ouverte : Communication dans un congrès

Tannoury, Charbel | Avramovic, Vanessa | Okada, Etienne | Coinon, Christophe | Lampin, Jean-Francois | Peytavit, Emilien

Edité par HAL CCSD ; IEEE

International audience. In this work we present an original design of a traveling-wave photomixer (TWP) based on low-temperature-grown GaAs layer (LT-GaAs) optimized for 1550 nm wavelength excitation. The optical wave is absorbed in the LT-GaAs through an integrated silicon nitride-based waveguide. The optical waveguide is centered between two metallic contacts that serves as biasing electrodes and metallic strips of a THz coplanar waveguide. The device exhibited dc photoresponses as high as 50 mA/W.

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