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Ultra-thin InGaAs-MSM photodetectors for THz optoelectronics applications

Archive ouverte : Communication dans un congrès

Billet, Maximilien | Desmet, Yann | Coinon, Christophe | Ducournau, Guillaume | Wallart, X. | Lampin, Jean-Francois | Peytavit, Emilien

Edité par HAL CCSD ; IEEE

International audience. We present a new design of InGaAs metal-semiconductor-metal (InGaAs-MSM) photodetectors placed in optical resonant cavities in order to reduce inter-electrode spacing while keeping a high photoresponse. Its static and dynamic photoresponse properties have been measured by means of a photomixing experiment up to 67 GHz, showing the potential of this device for GHz and THz applications.

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