Combining low trapping effects and high electron confinement in sub-100 nm AlN/GaN HEMTs under high electric field

0 avis

Combining low trapping effects and high electron confinement in sub-100 nm AlN/GaN HEMTs under high electric field

Archive ouverte : Communication dans un congrès

Edité par HAL CCSD

International audience

Langue: Anglais

Date de publication: 2022-10-09

Source: Proceeding of IWN2022

Consulter en ligne

Consulter le document

Suggestions

Du même auteur

High Efficiency AlN/GaN HEMTs for Q-Band Applications with an Improved Ther...

Archive ouverte: Article de revue

Kabouche, Riad | 2019-03

International audience. In this paper, we demonstrate Q-band power performance of carbon doped AlN/GaN high electron mobility transistors (HEMTs) using a deep sub-micrometer gate length (120 nm). With a maximum drai...

Remarkable Breakdown Voltage on AlN/AlGaN/AlN double heterostructure

Archive ouverte: Communication dans un congrès

Abid, Idriss | 2020-09-13

International audience. Ultra wide band gap (UWBG) materials such as AlN are part of a class of materials that have a larger band gap than conventional wide band gap (WBG) materials such as GaN, allowing higher oper...

Low on-resistance and low trapping effects in 1200 V superlattice GaN-on-si...

Archive ouverte: Communication dans un congrès

Kabouche, Riad | 2019-07-07

International audience. Significant efforts are currently deployed in order to find optimum GaN-on-silicon epitaxial structuresenabling outstanding DC performances beyond 1 kV while delivering low trapping effects. ...

Du même sujet

Reading History of Science as a Physics and Mathematics Framework for Newto...

Archive ouverte: Communication dans un congrès

Pisano, Raffaele | 2017-04-19

International audience

On Mechanics and Thermodynamics Analogies in History of Physics-Mathematics...

Archive ouverte: Communication dans un congrès

Pisano, Raffaele | 2017-05-12

International audience

On the epistemic interplay between physics and mathematics such as a dynami...

Archive ouverte: Communication dans un congrès

Pisano, Raffaele | 2017-06-12

International audience

A CMOS Compatible Thermoelectric Device made of Crystalline Silicon Membran...

Archive ouverte: Article de revue

Bah, Thierno-Moussa | 2022-12-10

International audience. Herein, we report the use of nanostructured crystalline silicon as a thermoelectric material and its integration into thermoelectric devices. The proof-of-concept relies on the partial suppre...

Effet de l'angle de charge sur les harmoniques d'efforts magnétiques dans l...

Archive ouverte: Communication dans un congrès

Le Besnerais, Jean | 2016-06-07

International audience. Cet article étudie l'effet de l'angle de charge sur les efforts harmoniques de Maxwell (tangentiels et radiaux) et les bruits et vibrations d'origine magnétique dans deux machines synchrones ...

Further investigation of convolutional neural networks applied in computati...

Archive ouverte: Article de revue

Gong, Ruohan | 2022-04-07

International audience. Convolutional neural networks (CNN) have shown great potentials and have been proven to be an effective tool for some image-based deep learning tasks in the field of computational electromagn...

Chargement des enrichissements...