![SiGe HBTs and BiCMOS technology for present and future millimeter-wave system. SiGe HBTs and BiCMOS technology for present and future millimeter-wave system: [Invited] | Zimmer, Thomas](https://hal.archives-ouvertes.fr/hal-03111157/thumb/medium "Plus d'infos sur 'SiGe HBTs and BiCMOS technology for present and future millimeter-wave system. SiGe HBTs and BiCMOS technology for present and future millimeter-wave system: [Invited]'")
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SiGe HBTs and BiCMOS technology for present and future millimeter-wave system. SiGe HBTs and BiCMOS technology for present and future millimeter-wave system: [Invited]
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International audience. This paper gives an overall picture from BiCMOS technologies up to THz systems integration, which were developed in the European Research project TARANTO. The European high performance BiCMOS technology platforms are presented, which have special advantages for addressing applications in the submillimeter-wave and THz range. The status of the technology process is reviewed and the integration challenges are examined. A detailed discussion on millimeter-wave characterization and modeling is given with emphasis on harmonic distortion analysis, power and noise figure measurements up to 190 GHz and 325 GHz respectively and S-parameter measurements up to 500 GHz. The results of electrical compact models of active (HBTs) and passive components are presented together with benchmark circuit blocks for model verification. BiCMOS-enabled systems and applications with focus on future wireless communication systems and high-speed optical transmission systems up to resulting net data rates of 1.55 Tbit/s are presented.
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![Development of a power setup load-pull in G frequency [140-220 GHz] and application to HBTs transistor characterization in the BiCMOS 55 nm technology. Développement d’un banc de mesure load-pull en bande G [140-220 GHz] et application à la caractérisation des transistors HBTs en technologie BiCMOS 55 nm | Maye, Caroline](https://bibliotheque.univ-catholille.fr/ui/skins/default/portal/front/images/General/DocType/EOAI_MEDIUM.png "Plus d'infos sur 'Development of a power setup load-pull in G frequency [140-220 GHz] and application to HBTs transistor characterization in the BiCMOS 55 nm technology. Développement d’un banc de mesure load-pull en bande G [140-220 GHz] et application à la caractérisation des transistors HBTs en technologie BiCMOS 55 nm'")
