0 avis
Extraction of packaged GaN power transistors parasitics using S-parameters
Archive ouverte : Article de revue
Edité par HAL CCSD ; Institute of Electrical and Electronics Engineers
International audience. In order to better predict the high-frequency switching operation of transistors in power converters, parasitic elements of these devices such as resistances, inductances, and capacitances must be accurately evaluated. This paper reports on the characterization of a gallium nitride (GaN) packaged power transistor using S-parameters in order to extract the device parasitics. Because the transistor is packaged, a calibration technique is carried out using specific test fixtures designed on FR4 printed circuit board (PCB) in order to get the S-parameters in the transistor plane from the measurement. The proposed method is suitable for a wide range of power devices. In this paper, it is applied to an enhancement-mode GaN high electron mobility transistor (HEMT). The impact of junction temperature on drain and source resistances is also evaluated. According to characterization results, equation-based modeling is proposed for the nonlinear parameters. The extracted parasitic elements are compared with reference values given by the device manufacturer.
Consulter en ligne
Suggestions
Du même auteur
Du même sujet
![Covid-19 : une crise organisationnelle / Henri Bergeron, Olivier Borraz, Patrick Castel... [et al.] | Bergeron, Henri (1966-....) - sociologue. Auteur](https://covers.syracuse.cloud/Cover/ICTL/MONO/kxHAvjdxQUlzlJJDkNSNxA2/9782724626650/MEDIUM?fallback=https%3a%2f%2fbibliotheque.univ-catholille.fr%2fui%2fskins%2fICTL%2fportal%2ffront%2fimages%2fGeneral%2fDocType%2fMONO_MEDIUM.png "Plus d'infos sur 'Covid-19 : une crise organisationnelle / Henri Bergeron, Olivier Borraz, Patrick Castel... [et al.]'")