Mm-wave single-pole double-throw switches: HBT-vs MOSFET-based designs

Archive ouverte : Communication dans un congrès

Margalef-Rovira, Marc | Gaquière, Christophe | Lisboa de Souza, Antonio Augusto | Vincent, L. | Barragan, Manuel J. | Pistono, Emmanuel | Podevin, Florence | Ferrari, Philippe

Edité par HAL CCSD ; Institute of Electrical and Electronics Engineers Inc.

International audience. This paper aims to compare the performance of HBT-based and MOSFET-based mm-Wave SPDT switches in a single BiCMOS technology. To the best of authors' knowledge, a direct comparison of this function in the same integrated process has never been reported before. Measurement results on two 50-GHz integrated SPDTs reveal that the HBT-based SPDT switch yields 1.7 dB of insertion loss and 14 dB of isolation in its central frequency, with a bandwidth covering the 30-80 GHz frequency range when considering a return loss greater than 10 dB. On the other hand, the MOSFET-based SPDT switch yields 2.1 dB of insertion loss and 12 dB of isolation at center frequency and a bandwidth covering the 33-80 GHz frequency range.

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