Towards 500GHz Non-Volatile Monolayer 6G Switches | Kim, Myungsoo
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Towards 500GHz Non-Volatile Monolayer 6G Switches

Archive ouverte : Communication dans un congrès

Kim, Myungsoo | Ducournau, Guillaume | Skrzypczak, Simon | Szriftgiser, P. | Yang, Sung Jin | Wainstein, Nicolas | Stern, Keren | Happy, Henri | Yalon, Eilam | Pallecchi, Emiliano | Akinwande, Deji

Edité par HAL CCSD

International audience. High performance non-volatile analog switches based on monolayer MoS₂ are realized up to 480 GHz, covering the sixth-generation (6G) communication band. Due to its robust layered structure, crystalline MoS₂ enables low insertion loss and high isolation radio-frequency (RF) switch that utilizes its memristive property. Compared to other emerging switch technologies based on MEMS, RRAM, and phase-change memory (PCM); MoS₂ switches show superior sub-nanosecond pulse switching, low power consumption, and high data-rate operation. We demonstrate eye-diagram and constellation diagram with various modulation methods and remarkable data transmission rate up to 100 Gbit/s in a non-volatile RF switch. Notably, the operating frequencies are about 10× higher than previous reports on RF switches. This monolayer RF switch is expected to enable analog components for next-generation 6G communication and connectivity front-end systems.

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