Noise Figure Modeling Subject to Frequency and Temperature for AlGaN/GaN HEMTs

Archive ouverte : Communication dans un congrès

Alim, Mohammad Abdul | Rezazadeh, Ali A | Gaquière, Christophe

Edité par HAL CCSD ; IEEE

International audience. The microwave noise Figure modelling for AlGaN/GaN HEMTs is shown in this study over a large range of temperatures e.g., -40 to 150°C. Standard noise parameters for example minimum noise Figure NFmin), normalized noise equivalent resistance Rs, and association gain Ga were modelled at various frequencies and temperatures. The temperature coefficients of noise-related equivalent circuit parameters (ECPs) were also determined. The noise parameters of GaN on SiC based HEMTs are considered to be analogous to GaN HEMTs on Si, sapphire, and diamond substrates, as well as InP- and GaAs HEMTs. According to the findings, GaN/SiC HEMTs offer a lot of potential for applications requiring LNAs at high temperatures.

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