Organic doped diode rectifier based on parylene-electronic beam lithography process for radio frequency applications | Ferchichi, Khaoula
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Organic doped diode rectifier based on parylene-electronic beam lithography process for radio frequency applications

Archive ouverte : Article de revue

Ferchichi, Khaoula | Pecqueur, Sébastien | Guérin, David | Bourguiga, Ramzi | Lmimouni, Kamal

Edité par HAL CCSD ; Elsevier

International audience. We have adapted a "peel-off" process to structure stacked organic semiconductors (conducting polymers or small molecules) and metal layers for diode microfabrication. The fabricated devices are organic diode rectifier in a coplanar waveguide structure. Unlike conventional lithographic process, this technique does not lead to destroy organic active layers with an input oscillating voltage of 2 V peak-to-peak, promising for RFID device applications or for GSM band energy harvesting in low-cost IoT objects.

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