GaN schottky diode on silicon substrate for high power THz multiplier

Archive ouverte : Communication dans un congrès

Di Gioia, Giuseppe | Samnouni, M | Bouillaud, H | Mondal, P | Treuttel, J | Cordier, Yvon | Zegaoui, Malek | Ducournau, Guillaume | Roelens, Yannick | Zaknoune, Mohammed

Edité par HAL CCSD

International audience. GaN-based planar Schottky barrier diodes with potential applications in THz frequency multipliers were fabricated on silicon substrate and characterized. GaN is a promising candidate to overcome all the physical limitations of GaAs which have been reached in the frame of high frequency power multiplier applications. Fabrication process of GaN Schottky diodes performed by e-beam is presented and DC characterizations are reported. Preliminary results on silicon showed a low breakdown voltage.

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