GaAs Schottky Diodes Development for Millimeter Wave Doubler

0 avis

GaAs Schottky Diodes Development for Millimeter Wave Doubler

Archive ouverte : Communication dans un congrès

Edité par HAL CCSD

International audience. We report the fabrication of GaAs Schottky diodes to be integrated in a 75/150 frequency doubler device. It is a collaborative work between IEMN and LERMA relied on the development of a process with optimizing several technological steps. As a result, very highquality GaAs Schottky diodes have been fabricated with a reverse breakdown voltage as high as 15.2 V at about 15 kA.cm-² current density and an ideality factor of 1.1. These results enabled to consider the design and simulation of a millimeter-wave frequency doubler with estimated efficiency and output power up to 30% and 120mW at 150 GHz, respectively.

Langue: Anglais

Date de publication: 2021-10-14

Source: Wocsdice 2021 - 44th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe

Consulter en ligne

Consulter le document

Suggestions

Du même auteur

GaN Schottky diode on sapphire substrate for THz frequency multiplier appli...

Archive ouverte: Article de revue

Di Gioia, Giuseppe | 2022-04

International audience. Gallium Nitride, because of its high breakdown field, and peak and saturated electron drift velocity, high chemical stability and high thermal conductivity, is a very promising material as ca...

GaN schottky diode on silicon substrate for high power THz multiplier

Archive ouverte: Communication dans un congrès

Di Gioia, Giuseppe | 2021-06-14

International audience. GaN-based planar Schottky barrier diodes with potential applications in THz frequency multipliers were fabricated on silicon substrate and characterized. GaN is a promising candidate to overc...

GaN Schottky Diode for High Power THz Generation using Multiplier Principle

Archive ouverte: Communication dans un congrès

Di Gioia, Giuseppe | 2019-06-07

International audience. GaN-based planar Schottky barrier diodes with potential applications in THz frequency multipliers were fabricated and characterized. GaN is a promising candidate to overcome all the physical ...

Du même sujet

Reading History of Science as a Physics and Mathematics Framework for Newto...

Archive ouverte: Communication dans un congrès

Pisano, Raffaele | 2017-04-19

International audience

On Mechanics and Thermodynamics Analogies in History of Physics-Mathematics...

Archive ouverte: Communication dans un congrès

Pisano, Raffaele | 2017-05-12

International audience

On the epistemic interplay between physics and mathematics such as a dynami...

Archive ouverte: Communication dans un congrès

Pisano, Raffaele | 2017-06-12

International audience

A CMOS Compatible Thermoelectric Device made of Crystalline Silicon Membran...

Archive ouverte: Article de revue

Bah, Thierno-Moussa | 2022-12-10

International audience. Herein, we report the use of nanostructured crystalline silicon as a thermoelectric material and its integration into thermoelectric devices. The proof-of-concept relies on the partial suppre...

Effet de l'angle de charge sur les harmoniques d'efforts magnétiques dans l...

Archive ouverte: Communication dans un congrès

Le Besnerais, Jean | 2016-06-07

International audience. Cet article étudie l'effet de l'angle de charge sur les efforts harmoniques de Maxwell (tangentiels et radiaux) et les bruits et vibrations d'origine magnétique dans deux machines synchrones ...

Further investigation of convolutional neural networks applied in computati...

Archive ouverte: Article de revue

Gong, Ruohan | 2022-04-07

International audience. Convolutional neural networks (CNN) have shown great potentials and have been proven to be an effective tool for some image-based deep learning tasks in the field of computational electromagn...

Chargement des enrichissements...